| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor light emitting element which realizes emission of light having a strong light emission intensity and having a desired light tone, in particular, emission of light including red color or emission of white color.
SOLUTION : A semiconductor light emitting element 30 comprises a sapphire substrate 31, a base layer 32 made of GaN, an n-type contact layer 33 made of GaN, an n-type cladding layer 34 made of n-type Al0.15Ga0.85N, a light emitting layer 35 of a quantum well structure wherein an In0.15Ga0.85N well layer and a GaN barrier layer are alternately laminated by three cycles, a p-type cladding layer 36 made of p-type Al0.15Ga0.85N, and a p-type contact layer 37 of a structure wherein an Al0.15Ga0.85N layer and an In0.2Ga0.8N layer each having a thickness of 2 nm are laminated alternately by a plurality of cycles and which contains rare earth element Eu doped therein. |
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