客服热线:18202992950

MEMORY ELEMENT AND MEMORY DEVICE 发明申请

2023-06-18 4100 766K 0

专利信息

申请日期 2025-07-12 申请号 JP2004182775
公开(公告)号 JP2005197634A 公开(公告)日 2005-07-21
公开国别 JP 申请人省市代码 全国
申请人 SONY CORP
简介 PROBLEM TO BE SOLVED : To provide a memory element which easily and stably stores and reads information and is easily manufactured with a relatively simple method of manufacturing. SOLUTION : The memory element 10 is constituted by a memory thin film 4 which is sandwiched between a first electrode 2 and a second electrode 6 and in which at least a rare earth element is contained. An element selected from Cu, Ag, and Zn is contained in the memory thin film 4 or in a layer 3 contacting the memory thin film 4, and an element selected from Te, S, and Se is contained in the memory thin film 4 or in the layer 3 contacting the memory thin film 4.


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4