| 简介 |
PROBLEM TO BE SOLVED : To provide a memory element which easily and stably stores and reads information and is easily manufactured with a relatively simple method of manufacturing.
SOLUTION : The memory element 10 is constituted by a memory thin film 4 which is sandwiched between a first electrode 2 and a second electrode 6 and in which at least a rare earth element is contained. An element selected from Cu, Ag, and Zn is contained in the memory thin film 4 or in a layer 3 contacting the memory thin film 4, and an element selected from Te, S, and Se is contained in the memory thin film 4 or in the layer 3 contacting the memory thin film 4. |
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