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RARE EARTH ELEMENT-ADDED SEMICONDUCTOR OPTICAL AMPLIFIER AND OPTICAL SWITCH 发明申请

2023-03-19 2350 58K 0

专利信息

申请日期 2025-07-14 申请号 JP2003427379
公开(公告)号 JP2005191074A 公开(公告)日 2005-07-14
公开国别 JP 申请人省市代码 全国
申请人 AISIN SEIKI
简介 PROBLEM TO BE SOLVED : To provide a rare earth element-added semiconductor optical amplifier which can be used to amplify a femtosecond laser and which can amplify an ultrashort pulse. SOLUTION : The rare earth element-added semiconductor optical amplifier includes a rare earth element-added semiconductor optical waveguide 1, and electrodes 2, 2 for applying a voltage to the semiconductor optical waveguide 1, thereby moving the charge injected in the semiconductor waveguide 1 by applying the voltage to the rare earth element to excite to amplify a signal light propagating through the semiconductor waveguide 1. Since an amplifying band width is determined according to the energy level of the rare earth element, the amplifying band width is wide and the optical amplifier can amplify even the femtosecond laser beam having wide spectral band width. Since the waveguide can be thickened, the ultrashort pulse can be amplified.


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