| 简介 |
PROBLEM TO BE SOLVED : To obtain an MIS transistor in which the dispersion of threshold voltage in each transistor is extremely small and threshold voltage is low.
SOLUTION : A semiconductor device is provided with a 1st gate insulating film formed on a semiconductor substrate, a 1st gate electrode formed on the 1st gate insulating film and including a 1st conductive oxide film of which the work function ϕm(eV) is in a range of 3.65≤ϕm≤4.45, an n-MIS transistor having 1st source/drain areas formed on the semiconductor substrate on both the sides of the 1st gate electrode, a 2nd gate insulating film formed on the semiconductor substrate, a 2nd gate electrode formed on the 2nd gate insulating film and including a 2nd conductive oxide film of which the work function ϕm(eV) is in a range of 4.77≤ϕm≤5.57, and a p-MIS transistor having 2nd source-drain areas formed on the semiconductor substrate on both the sides of the 2nd gate electrode. In this case, a 1st gate electrode material for the n-MIS and a 2nd gate electrode material for the p-MIS can be mutually exchanged, so that processes can be simplified. Since a fact that the doping dependency of the work function is small is shown for the first time, the dispersion of threshold voltage in each transistor is rare. |
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