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MAGNETOELECTRONIC DEVICES BASED ON COLOSSAL MAGNETORESISTIVE THIN FILMS 发明申请

2023-03-20 2090 1187K 0

专利信息

申请日期 2025-07-12 申请号 WOUS04042200
公开(公告)号 WO2005060657A2 公开(公告)日 2005-07-07
公开国别 WO 申请人省市代码 全国
申请人 YALE UNIVERSITY
简介 The present invention is directed to the use of perovskite manganite thin films and other magnetic films that exhibit both planar Hall effect and biaxial magnetic anisotropy to form the active area in magnetic sensor devices and in magnetic bit cells used in magnetoresistive random access memory (MRAM) devices. The manganite thin films of the invention are ferromagnetic manganites of the formula R1-xAxMnO3, wherein R is a rare-earth metal, A is an alkaline earth metal, and x is generally between about 0.15 and about 0.5.


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