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A silicon nitride sintered body 发明授权

2023-06-08 2970 84K 0

专利信息

申请日期 2025-08-17 申请号 JP11088912
公开(公告)号 JP3667145B2 公开(公告)日 2005-07-06
公开国别 JP 申请人省市代码 全国
申请人 Kyocera Corporation6633
简介 PROBLEM TO BE SOLVED : To provide a silicon nitride sintered compact capable of being produced at a low cost, stably having high strength and excellent in fatigue life characteristics, and to provide a method for producing the same. SOLUTION : This silicon nitride sintered compact is composed of a β-silicon nitride crystal phase 1, a grain-boundary crystal phase 2 consisting of rare earth element, silicon, aluminum, oxygen and nitrogen, and a grain-boundary amorphous phase. Rare earth element is contained in an amount of 2-10 wt.% in terms of oxides, aluminum is contained in an amount of 2-5 wt.% in terms of aluminum oxide, excess oxygen is contained in an amount of 0.5-5 wt.% in terms of silicon oxide, the ratio of the amount reduced to oxide of rare earth element to the amount reduced to aluminum oxide of aluminum is 0.2-0.7 and the ratio of the amount reduced to oxide of rare earth element to the amount reduced to silicon oxide of excess oxygen is 0.2-0.7. The average thickness of the grain-boundary amorphous phase 3 existing between silicon nitride particles themselves in the silicon nitride sintered compact is <=2 nm and the average thickness of the grain-boundary amorphous phase 4 existing between silicon nitride particles and the grain-boundary crystal phase is <=5 nm.


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