| 简介 |
PURPOSE : A silicon nitride thin film for an optical device is provided to improve light emitting efficiency of a rare earth element by exciting a rare earth element by an amorphous silicon quantum dot having higher light emitting efficiency than a crystalline silicon nano dot.
CONSTITUTION : An amorphous silicon quantum dot and a rare earth element are distributed together in a silicon nitride thin film for an optical device. The rare earth element is excited by the amorphous silicon quantum dot to emit light. The rare earth element is Er, Eu, Gd, Tb or Yb. The amorphous silicon quantum dot is 1-5 nanometer in size.
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