| 简介 |
PROBLEM TO BE SOLVED : To effectively change the conductivity of a conducting channel by polarized charges of dielectrics, by solving a problem resulting from charges trapped on a dielectrics/conducting channel interface or a conducting channel itself, in a switching element using a dielectric gate. SOLUTION : A switching element 7 is provided with a lamination film formed by laminating a conducting channel 2 composed of perovskite oxide and a dielectric layer 3 composed of perovskite oxide or the like. By the interfacial charges caused by polarization of the dielectric layer 3, the conductivity of the conducting channel 2 is changed. The perovskite oxide is expressed by, e.g. AE1-x REx TO3 which is material generating the metal insulator transition by charge injection. In the formula, AE is at least one kind selected out of alkaline earth metal elements, RE is at least one kind selected out of rare earth metal elements, T is at least one kind selected out of transition metal elements, and (x) is 0<=x<1. |
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