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Silicon based substrate with a CTE compatible layer on the substrate 发明授权

2023-06-28 2300 163K 0

专利信息

申请日期 2025-06-25 申请号 KR1020020080647
公开(公告)号 KR100500131B1 公开(公告)日 2005-06-29
公开国别 KR 申请人省市代码 全国
申请人 UNITED TECHNOLOGIES CORP
简介 An article comprising a substrate containing silicon and at least one layer which contains a coefficient of thermal expansion (CTE) tailoring additive in an amount sufficient to maintain a compatible CTE with at least one adjacent layer and the substrate. In one embodiment there is provided an article comprising a silicon containing substrate and at least one layer comprising a niobate selected from the group comprising niobates of the formula a(alkaline earth metal oxide)•b(NbOx) where x = 1 to 3 and b = 1/3a to 3a, NbOx in an amount of 1 to 75 wt.% to an oxide selected from the group consisting of MgO, CaO, SrO, BaO, Al2O3, Y2O3, L2O3, rare earth oxides and mixtures thereof where x = 1 to 3 (for example NbO, NbO2, Nb2O3, Nb2O5), particularly Nb2O5•Al2O3 and 2BaO•2SrO•3Nb2O5.


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