| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor material as ferromagnetic at a room temperature, and a so-called nonvolatile semiconductor device using it whose read/write velocity is rapid and memory does not disappear even if an electric supply is turned off.
SOLUTION : A dilute magnetic semiconductor material is used as a magnetosensitive layer of an MRAM, and its composition formula is expressed by (Ga1-yIny)1-xMxAs (wherein M expresses at least one element of an element group consisting of transit metal and rare earth), and values of x, y are in the range of 0.1≤x≤0.3, 0
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