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MAGNETIC SWITCHING DEVICE AND MEMORY USING THE SAME 发明申请

2023-08-05 1950 1965K 0

专利信息

申请日期 2025-07-18 申请号 US10953489
公开(公告)号 US20050122828A1 公开(公告)日 2005-06-09
公开国别 US 申请人省市代码 全国
申请人 Akihiro Odagawa; Hiroshi Sato; Toshikazu Yamada; Yuji Ishii; Isao Inoue; Hiroshi Akoh; Masashi Kawasaki; Hidenori Takagi
简介 A magnetic switching device of the present invention includes : at least one transition member; at least one electrode; and at least one free magnetic member. The transition member contains a perovskite compound that contains at least a rare earth element and an alkaline-earth metal, the electrode and the free magnetic member are arranged in parallel and in a noncontact manner on the transition member, at least one of the free magnetic members is coupled magnetically with the transition member, and the transition member undergoes at least ferromagnetism-antiferromagnetism transition by injecting or inducing electrons or holes, whereby a magnetization direction of at least one of the free magnetic members changes. This configuration is applicable to a magnetic memory that records/reads out magnetization information of the free magnetic layer and various magnetic devices that utilize a resistance change of the magnetoresistive effect portion.


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