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MAGNETIC SWITCHING ELEMENT AND MEMORY DEVICE USING IT 发明申请

2023-05-14 3490 407K 0

专利信息

申请日期 2025-09-16 申请号 JP2004267239
公开(公告)号 JP2005129908A 公开(公告)日 2005-05-19
公开国别 JP 申请人省市代码 全国
申请人 MATSUSHITA ELECTRIC IND CO LTD; NAT INST OF ADV IND TECHNOL
简介 PROBLEM TO BE SOLVED : To provide a method for inverting the magnetized state in a magnetic body with high energy conversion efficiency, a magnetic switching element which substantially reduces energy consumption of the entire magnetic device that changes the magnetized state provided by an external magnetic field, and a memory device using the magnetic switching element. SOLUTION : A magnetic switching element comprises at least one transfer body (1), at least one electrode (2), and at least one free magnetic body (3). The transfer body (1) of the magnetic switching element is made of a perovskite compound containing at least a rare-earth element and an alkaline earth metal. On the transfer body (1), the electrode (2) and the free magnetic body (3) are placed so that they are in parallel with each other, and that they are separated from each other. At least one free magnetic body (3) is magnetically coupled to the transfer body (1), and the transfer body (1) is transferred to a ferromagnetic state or an antiferromagnetic state through injection/induction of electrons/holes, thereby changing at least one magnetization direction of the free magnetic body (3).


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