| 简介 |
PROBLEM TO BE SOLVED : To obtain a smooth treated surface of a single crystal having a perovskite structure by treating the crystal with a treating liquid comprising a mixture soln. of phosphoric acid and aqua regia. SOLUTION : A single crystal having a rare earth perovskite structure such as an NdGaO3 single crystal containing one or more elements of the 13 (3B) group rare earth elements such as Al, Ga and In is used as a substrate for a semiconductor material. The (101) plane of the single crystal substrate is dipped in a treating liquid comprising a mixture soln. of phosphoric acid and aqua regia by about 1/3 volume ratio at about 60 deg.C liquid temp. for 15min. for etching. The single crystal is then washed with water and dried to obtain a single crystal substrate having a perovskite structure from which a modified layer of 1-10μm thickness due to processing is removed. |
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