| 简介 |
PROBLEM TO BE SOLVED : To provide a spin device which can be made practically available at lower cost.
SOLUTION : A spin orbit interaction of a metal material layer consisting of Cu is increased by adding nitrogen to the metal material layer. Cu is a material of which the spin orbit interaction is weak and which cannot be applied to a spin device. On the other hand, the spin orbit interaction is increased by adding nitrogen as an impurity to a copper thin film (metal material layer), such that the metal material layer can be applied to the spin device. A strength of the spin orbit interaction can be made substantially equal to a rare metal such as platinum by Cu and nitrogen that are inexpensive materials, and an expensive material system can be substituted by inexpensive materials, thereby reducing cost of the spin device. A spin injection magnetic memory comprises : a spin injection layer (nitrogen added metal material layer) 101; and a free layer 102 formed on the spin injection layer 101 and consisting of a ferromagnetic substance.
SELECTED DRAWING : Figure 5
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