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The nitrogen oxide sensor [...] sulfur and its manufacturing method 发明申请

2023-02-22 2170 469K 0

专利信息

申请日期 2025-06-28 申请号 JP2018524256
公开(公告)号 JP2018533734A 公开(公告)日 2018-11-15
公开国别 JP 申请人省市代码 全国
申请人 中国科学院上海微系統与信息技術研究所
简介 The present invention provides a nitrogen oxide gas sensor based on sulfur-doped graphene and a preparation method therefor. The method comprises the following steps : 1) providing graphene and a micro heater platform substrate, and transferring the graphene onto the micro heater platform substrate; 2) putting the micro heater platform substratecovered with the graphene into a chemical vapor deposition reaction furnace; 3) performing gas feeding and exhausting treatment to the reaction furnace by using inert gas; 4) simultaneously feeding inert gas and hydrogen gas into the reaction furnace at a first temperature; 5) feeding inert gas, hydrogen gas and sulfur source gas into the reaction furnace at a second temperature for reaction to perform sulfur doping to the graphene (21); and 6) stopping feeding the sulfur source gas, and performing cooling in a hydrogen gas and insert gas shielding atmosphere. The preparation method provided by the present invention may adopt a wafer level substrate, which can realize wafer level preparation, can achieve the level of batch preparation and can greatly reduce the production cost; and the prepared gas sensor has relatively high sensitivity and selectivity to nitrogen oxide gas molecules.


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