| 简介 |
PROBLEM TO BE SOLVED : To provide a manufacturing method of a semiconductor device, having a rare metal layer which reduces the problems in patterning and in annealing in hydrogen.
SOLUTION : This manufacturing method of the semiconductor device comprises (a) a step of forming the rare metal layer on a semiconductor substrate provided with the semiconductor device, (b) a step of forming a TaO film on the rare metal layer, (c) a step of patterning the TaO film using a resist pattern, and (d) a step of patterning rare metal layer using the patterned TaO film. |
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