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SEMICONDUCTOR LASER PUMPED SOLID-STATE LASER 发明申请

2023-05-06 1980 115K 0

专利信息

申请日期 2025-08-04 申请号 JP2003323841
公开(公告)号 JP2005093624A 公开(公告)日 2005-04-07
公开国别 JP 申请人省市代码 全国
申请人 SHOWA OPTRONICS CO LTD
简介 PROBLEM TO BE SOLVED : To provide a semiconductor laser pumped solid-state laser for increasing laser output, by preventing damages to a laser crystal, accompanying increase in pumping light in the end pumped system semiconductor laser pumped solid-state laser. SOLUTION : In the end pumped type system semiconductor laser pumped solid-state laser, a plurality of laser crystal elements 5, 6, 7 having the same composition expression although only rare earth ion concentration differs are arranged as a laser crystal in the order of smaller rare earth ion concentration from the side in which pumping light enters. A heat radiation means 10 is provided on the side, excluding the surface in which the laser of the laser crystal passes for radiating to the outside orthogonally crossing a surface in which laser passes, thus averaging the amount of absorption of laser per unit length to the laser crystal, as well as cooling the laser crystal.


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