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SILICON BASED SUBSTRATE WITH A CTE COMPATIBLE LAYER ON THE SUBSTANCE 检索报告

2023-10-25 3880 200K 0

专利信息

申请日期 2025-06-28 申请号 EP04021906
公开(公告)号 EP1498401A3 公开(公告)日 2005-04-06
公开国别 EP 申请人省市代码 全国
申请人 United Technologies Corporation
简介 An article comprising a substrate containing silicon and at least one layer which contains a coefficient of thermal expansion (CTE) tailoring additive in an amount sufficient to maintain a compatible CTE with at least one adjacent layer and the substrate. In one embodiment there is provided an article comprising a silicon containing substrate and at least one layer comprising a niobate selected from the group comprising niobates of the formula a(alkaline earth metal oxide)•b(NbOx) where x="1 to 3 and" b = 1/3a to 3a, NbOx in an amount of 1 to 75 wt.% to an oxide selected from the group consisting of MgO, CaO, SrO, BaO, Al2O3, Y2O3, L2O3, rare earth oxides and mixtures thereof where x = 1 to 3 (for example NbO, NbO2, Nb2O3, Nb2O5), particularly Nb2O5•Al2O, and 2BaO•2SrO•3Nb2O5.


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