| 申请日期 | 2025-09-13 | 申请号 | JP2003318078 |
| 公开（公告）号 | JP2005086066A | 公开（公告）日 | 2005-03-31 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | SHINETSU HANDOTAI KK | ||
| 简介 | PROBLEM TO BE SOLVED : To provide a laminated wafer manufacturing method wherein the occurrence is prevented of bonding failures such as voids and blisters on the laminated surface due to ion implantation during the application of the ion implantation peeling method.
SOLUTION : In this laminated wafer manufacturing method, an Si1-XGeX layer (0 | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
