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GROWING METHOD FOR GARNET-TYPE SINGLE CRYSTAL 发明申请

2023-01-20 3240 107K 0

专利信息

申请日期 2025-07-11 申请号 JP2003308756
公开(公告)号 JP2005075688A 公开(公告)日 2005-03-24
公开国别 JP 申请人省市代码 全国
申请人 NGK SPARK PLUG CO
简介 PROBLEM TO BE SOLVED : To provide a growing method for a garnet-type single crystal whereby a large-sized grown crystal is yielded, the orientation control of the crystal is made possible, and the compositional difference in the crystal is not caused. SOLUTION : In this growing method, a seed crystal is brought into contact with a melt which at least crystallizes X3Fe5O12 [wherein X is Y (yttrium), (Bi, Re (provided Re is a rare earth element)), or (Bi Tb)]; then, while an X3Fe5O12 single crystal is being grown by drawing up the seed crystal, a raw material having the same weight and composition as that of the above drawn-up single crystal is supplied to the melt.


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