| 申请日期 | 2025-06-24 | 申请号 | US15712002 |
| 公开（公告）号 | US10128350B2 | 公开（公告）日 | 2018-11-13 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | IQE plc | ||
| 简介 | Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer. | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
