Silicon oxide or silicon oxynitride thin film by atomic layer deposition

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PROBLEM TO BE SOLVED : To provide a production method by an atomic layer deposition method, capable of obtaining silicon oxide or a silicon oxynitride thin film having high quality in excellent productivity at a substrate temperature within a temperature range below 250°C from a temperature necessary for vaporizing a silicon compound and supplying it stably into a deposition chamber in which a substrate is installed.SOLUTION : A production method of silicon oxide or a silicon oxynitride film by an atomic layer deposition method is provided with steps for : (A) supplying a silicon compound expressed by general formula (1) into a deposition chamber in which a substrate is installed; and (B) supplying ozone gas into the deposition chamber in which the substrate is installed. (R-Rare each independently H or a linear or branched C1-5 alkyl group; and A is a C1-8 alkanediyl group.)