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A wafer heater assembly comprises a heater substrate and a non-porous outermost layer. The heater substrate comprises silicon nitride (Si3N4) and includes at least one heating element embedded therein. The non-porous outermost layer is associated with at least a first surface of the heater substrate. The non-porous outermost layer comprises a rare-earth (RE) disilicate (RE2Si2O7); where RE is one of Yb and Y. The non-porous outermost layer includes an exposed surface configured to contact a wafer for heating, the exposed surface opposite the first surface of the heater substrate. Methods of making wafer heater assemblies are also disclosed as well as methods of using the wafer heater assembly.