COMPONENT FOR SEMICONDUCTOR PRODUCTION DEVICE

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In order to suppress the scattering of a rare earth hydroxide and also suppress a decline in the joining strength between a first ceramic member and a second ceramic member, this component for a semiconductor production device is equipped with a first ceramic member formed from a material having AlN as the principal component thereof, a second ceramic member formed from a material having AlN as the principal component thereof, and a joining layer which joins the first ceramic member and the second ceramic member and is positioned between the first ceramic member and the second ceramic member, wherein the joining layer contains a perovskite oxide represented by chemical formula ABO3 (herein, A is a rare earth element and B is Al), and does not contain a rare earth single oxide having only oxygen and a rare earth element.