Bonding wire for semiconductor device

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PROBLEM TO BE SOLVED : To provide a bonding wire for a semiconductor device, which includes Ag as a primary component, which realizes an adequate and stable connection strength of a ball connecting part, which allows no neck damage to be caused even with a low loop, and which achieves a good leaning property and a good FAB form. SOLUTION : To solve the above problem, a bonding wire for a semiconductor device according to the present invention comprises : P at 0.031-0.045 atom%, or at least one kind of Be, B, Ca, Y, La and Ce and P at 0.031-0.045 atom% in total; at least one kind of In, Ga and Cd at 0.05-5.00 atom% in total; and the balance consisting of Ag and inevitable impurities. Thus, a bonding wire for a semiconductor device can be arranged, which ensures a connection strength of a ball connecting part by adequately forming an intermetallic compound layer at a ball part connection interface, which causes no neck damage even with a low loop, and which achieves a good leaning property and a good FAB form. SELECTED DRAWING : None COPYRIGHT : (C)2018, JPO&INPIT