Rare-Earth Metal Oxide Resistive Random Access Non-Volatile Memory Device

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A Resistive Random Access Memory (RRAM) device and a method of its manufacture are disclosed. The RRAM device comprises a lower oxygen affinity bottom electrode, a hygroscopic solid-state dielectric layer, comprising hydroxyl groups, and a higher oxygen affinity top electrode. In some embodiments, the hygroscopic solid-state dielectric layer is a rare-earth metal oxide layer.