RARE EARTH METAL SURFACE-ACTIVATED PLASMA DOPING ON SEMICONDUCTOR SUBSTRATES

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Methods for doping semiconductor substrates by using a deposition technique and an annealing technique of a rare earth metal-containing film such as an yttrium-containing film are provided in the present invention. The rare earth metal-containing films are deposited by using gas, liquid, or solid precursors without a bias, and can be conformally deposited. Some embodiments of the present invention can involve deposition using a plasma. The substrates can be annealed at temperatures lower than approximately 500 deg. C.COPYRIGHT KIPO 2017