Si substrate flattening method and device

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[Problem] To provide a silicon-substrate planarization method, and a device used therein, that uses no rare earths or other polishing agents or abrasives, uses no difficult-to-handle, environmentally-unfriendly solutions such as hydrogen fluoride, is compatible with clean rooms, and with a processing speed that rivals CMP, yields a surface that is higher in grade than CMP-finished surfaces. [Solution] A catalytic material that facilitates both oxidation of silicon and hydrolysis of silicon-oxide films is used as a base processing surface, and in the presence of water, a silicon substrate and said base processing surface are made to contact each other with a prescribed pressure and are moved relative to each other. The catalytic functionality inherent in the base processing surface promotes oxidation of the surface of the silicon and the removal of degradation products due to preferential hydrolysis of asperities on the resulting oxide film. The surface of the silicon substrate is thus planarized to a surface roughness of RMS 0.2 nm or less at a processing speed of 10 nm/h to 10 µm/h without the use of polishing agents or abrasives.