Wiring structure for display device

文件类型：PDF文档
文件大小：91K
PROBLEM TO BE SOLVED : To provide a wiring structure for a display device, which is not only superior in heat resistance when subjected to a high-temperature heat treatment at 450-600°C, and which can hold down an electric resistance further even after high-temperature heating.SOLUTION : A wiring structure according to the invention comprises a laminate structure which includes, from a substrate side in turn, a first layer of an Al alloy including 0.1-3.0 atom% of a rare earth element with the balance consisting of Al and inevitable impurities, and a second layer composed of a nitride film of Mo, Ti, a Mo alloy or a Ti alloy. The first layer has a film thickness of 80-700 nm, and the second layer has a film thickness of over 10 to 70 nm. When the Al alloy is heated at a temperature of 450-600°C for 2 hours or shorter time, the maximum crystal grain diameter of the Al alloy is 0.8-10 μm. When the wiring structure is heated at a temperature of 450-600°C, the electric resistance of the first layer is 4.5 μΩcm or less, and the hillock density is less than 1×109/m2.SELECTED DRAWING : NoneCOPYRIGHT : (C)2017, JPO&INPIT