Continuous Process Incorporating Atomic Layer Etching

文件类型：PDF文档
文件大小：753K
A method of continuously fabricating a layered structure on a substrate having a patterned recess, comprises the following steps of : (i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by PEALD using first RF power; and (ii) continuously, after completion of the step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by PEALE using second RF power, wherein a pressure of the reaction chamber is controlled at 30 Pa to 1, 333 Pa throughout the steps (i) and (ii), a noble gas is supplied to the inside of the reaction chamber continuously throughout the steps (i) and (ii), and the second RF power is higher than the first RF power.COPYRIGHT KIPO 2017