HEAT TREATMENT METHOD

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The present invention is a method for heat treatment of a plurality of semiconductor wafers horizontally placed on a supporting member coated with SiC in a vertical heat treatment furnace, the method including performing heat treatments while switching the supporting member and a heat treatment condition such that the supporting member is continuously used in a heat treatment under either one of a first condition and a second condition for a certain period of time and then continuously used in a heat treatment under the other condition for a certain period of time, wherein the heat treatment under the first condition is performed at 1000°C or higher in an atmosphere containing a rare gas and not containing oxygen, and the heat treatment under the second condition is performed at 1000°C or higher in an atmosphere containing oxygen and not containing a rare gas. As a result, slip dislocation can be inhibited.