ALUMINUM NITRIDE SINTERED COMPACT, COMPONENT FOR SEMICONDUCTOR MANUFACTURING, AND METHOD FOR PRODU

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PROBLEM TO BE SOLVED : To provide an aluminum nitride sintered compact high in plasma resistance and corrosion resistance, in which the generation of particles is suppressed to reduce contamination, a component for a semiconductor manufacturing, and a method for producing the aluminum nitride sintered compact. SOLUTION : Provided is an aluminum nitride sintered compact having a tendency that a Y compound as a rare earth compound is largely present toward the surface compared with the inside of the aluminum nitride sintered compact. Thus, a thermal expansion difference is relaxed, and the risk of peeling caused by thermal expansion is low. Further, the crystal grains of the Y compound are present on the surface of the aluminum nitride sintered compact, and further, the ratio of the number of the grains in contact with the crystal grains of the other Y compound in the horizontal direction along the surface is the high one of 80% or more. In this way, even in the case a CDV shower head 1 is exposed to the atmosphere of plasma or the atmosphere of reaction gas, the aluminum nitride sintered compact is hard to be deteriorated, and the generation of contamination can be suppressed. SELECTED DRAWING : Figure 1 COPYRIGHT : (C)2016, JPO&INPIT