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A process for the preparation of a doped with rare earth element piezoelectric material, comprising a first component, a second component and the rare earth element. The method comprising the following : providing a substrate; initial flow of hydrogen over the substrate; after the initial flow of the hydrogen over the substrate, to form the streams of the first component over a surface of a single target piezoelectric material doped with rare earth element, wherein the target comprises the rare earth element in a particular atomic percent; and sputtering the doped from the target to the substrate with rare earth element piezoelectric material.