MANUFACTURING METHOD FOR SEMICONDUCTOR CERAMIC COMPOSITION, SEMICONDUCTOR CERAMIC COMPOSITION, PTC

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Provided is a novel manufacturing method which can perform adjustment so that the Curie temperature of a semiconductor ceramic composition becomes higher, and the room temperature resistivity ρ becomes lower. The method is a manufacturing method for a semiconductor ceramic composition in which a (BiA)TiO3 (A is at least one from among Na, Li, and K) calcined powder and a (BaR)[TiM]O3 (R is at least one from among the rare-earth elements including Y, M is at least one from among Nb, Ta, and Sb, and either R or M is required) calcined powder are prepared, the (BiA)TiO3 calcined powder and the (BaR)[TiM]O3 calcined powder are mixed, and subsequently, molding and sintering are performed, said manufacturing method for a semiconductor ceramic composition characterized in that prior to the mixing of the (BiA)TiO3 calcined powder and the (BaR)[TiM]O3 calcined powder, a/b ≥ 2.0 is satisfied, where a is the BET value of the (BiA)TiO3 calcined powder and b is the BET value of the (BaR)[TiM]O3 calcined powder.