MAGNETIC SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING MAGNETIC SEMICONDUCTOR ELEMENT

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PROBLEM TO BE SOLVED : To provide a magnetic semiconductor element using a group III nitride magnetic semiconductor, capable of solving a problem relating to stability and a Curie temperature of ferromagnetism. SOLUTION : A magnetic semiconductor element 11 includes a semiconductor region 13, and a group III nitride semiconductor region 15. The group III nitride semiconductor region 15 is provided on a principal surface 13a of the semiconductor region 13. A junction J0 is formed on the principal surface 13a of the semiconductor region 13. The semiconductor region 13 has the principal surface 13a composed of a hexagonal group III nitride semiconductor, and the principal surface 13a includes one of a semipolar surface and a nonpolar surface. In this manner, a first group III nitride semiconductor layer 17 of the magnetic semiconductor element 11 is provided on the semipolar surface or the nonpolar surface. The first group III nitride semiconductor layer 17 provided on the semipolar surface and the nonpolar surface is excellent in intake to a crystal of at least any magnetic metal of transition metal and rear-earth metal, and also excellent in crystallinity in containing the magnetic metal. COPYRIGHT : (C)2015, JPO&INPIT