氧氮化物半导体薄膜及其制造方法，及薄膜电晶体

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藉由氧氮化物结晶薄膜，提供一种氧化物半导体薄膜，其具有比较高的载体移动度，适合作为TFT之通道层材料。将含有In、O及N的非晶质之氧氮化物半导体薄膜，或含有In、O、N及添加元素M(M是选自Zn、Ga、Ti、Si、Ge、Sn、W、Mg、Al、Y及稀土类元素的一种以上之元素)之非晶质氧氮化物半导体薄膜，藉由加热温度200℃以上、加热时间1分钟至120分钟的退火处理，获得结晶质之氧氮化物半导体薄膜。 (Problem) ; Providing a suitable oxide semiconductor thin film made of an oxynitride crystalline thin film, which has a relatively higher carrier mobility, and is suitable as channel layer material of TFT. ; (Solution) ; An oxynitride crystalline semiconductor thin film is obtained by a oxynitride annealing amorphous semiconductor thin film at a heating temperature of 200℃ or more, with a heating time of 1 to 120 minutes; the oxynitride crystalline semiconductor thin film includes In, O and N, or includes In, O, N and an additional element M (one or more elements selected from Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y and rare-earth elements).