Manganese oxide thin perovskite type

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Provided is a thin film that thoroughly exploits the resistance changes caused by charge and orbital ordering in a perovskite manganese oxide. One mode of the present invention provides a perovskite manganese oxide thin film 3 formed on an (m10) oriented (19 ‰¥ m ‰¥ 2) substrate 2 and containing Ba and a rare earth element (Ln) in the A sites of the perovskite crystal lattice, wherein the atomic planes are stacked in a LnO-MnO 2 -BaO-MnO 2 -LnO pattern in the [100] axis direction.