A manufacturing method of a non-volatile memory device

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A method of manufacturing a nonvolatile memory device includes : forming a tantalum oxide material layer including an oxygen-deficient transition metal oxide; forming a tantalum oxide material layer including a transition metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the tantalum oxide material layer; and exposing, after the forming of a tantalum oxide material layer, the tantalum oxide material layer to plasma generated from a noble gas.