The perovskite-type composite oxide of channel layer and a field effect transistor and a memory elem

文件类型：PDF文档
文件大小：391K
PROBLEM TO BE SOLVED : To provide a field effect transistor which changes resistance by injecting a highly concentrated charge into a channel using an electrical double layer method and also to provide a memory element using the field effect transistor as a switching element. SOLUTION : A single crystal film, which has a perovskite structure and comprises a composite oxide represented by chemical formula : A1-xBxNiO3, where A is one element selected from rare earth elements, B is at least one element of the rare earth elements except A, and x is an actual number satisfying 0≥x≥1), is used for a channel layer. COPYRIGHT : (C)2012, JPO&INPIT