SOI wafer manufacturing method

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PROBLEM TO BE SOLVED : To provide a method capable of manufacturing an SOI wafer which inhibits scratches and SOI film thickness abnormality. SOLUTION : A manufacturing method of an SOI wafer comprises : ion implanting a gas ion of one and more between hydrogen and a noble gas from a surface of a bond wafer composed of a semiconductor singly crystal substrate to form an ion implanted layer; bonding the ion implanted surface of the bond wafer with a base wafer surface via an oxide film; and subsequently performing a peeling heat treatment in a heat treat furnace to manufacture an SOI wafer by peeling the bond wafer at the ion implanted layer. After the peeling heat treatment, the SOI wafer and the bond wafer after peeling are taken out from the heat treatment furnace after a temperature drops to 250°C and under at a temperature drop speed slower than 3.0°C/min. COPYRIGHT : (C)2014, JPO&INPIT