GaN-BASED LED EPITAXIAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

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PROBLEM TO BE SOLVED : To provide a GaN-based LED epitaxial structure and a method for manufacturing the same. SOLUTION : A GaN-based LED epitaxial structure includes a substrate containing a photoluminescence fluorescent material, and a GaN-based LED epitaxial structure grown on the substrate. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped Re3Al5O12 substrate. Since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission can be implemented by such an LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, patterning the substrate, and then laterally growing a GaN-based epitaxial structure. COPYRIGHT : (C)2015, JPO&INPIT