The material of yttrium oxide, yttrium oxide material member for a semiconductor manufacturing devi

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A substrate of an electrostatic chuck, which is a member for use in a semiconductor manufacturing apparatus, is formed of an yttrium oxide based material that contains yttrium oxide (Y 2 O 3 ), silicon carbide (SiC), and a compound that contains a rare-earth element (RE), Si, O, and N. The yttrium oxide based material contains RE 8 Si 4 N 4 O 14 as a compound that contains a rare-earth element (RE), Si, O, and N, wherein RE may be La or Y. Y 8 Si 4 N 4 O 14 is produced during a sintering step of a raw material that contains the main component Y 2 O 3 and an accessory component Si 3 N 4 . Y 8 Si 4 M 4 O 14 and SiC in the yttrium oxide based material improve mechanical strength and volume resistivity.