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SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

2025-06-17 22:252240下载
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A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises : a semiconductor substrate (100); a rare earth oxide layer (200) formed on the semiconductor substrate (100); a channel region (300) formed on the rare earth oxide layer (200); and a source region (400) and a drain region (500) formed at both sides of the channel region (300) respectively, in which a relationship between a lattice constant a of the rare earth oxide layer (200) and a lattice constant b of a semiconductor material of the channel region (300) and/or the source region (400) and the drain region (500) is a = (n ± c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0
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