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A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises : a semiconductor substrate (100); a trench (200) formed in the semiconductor substrate (100), in which a rare earth oxide layer (300) is formed in the trench (200); a channel region (400) partly or entirely formed on the rare earth oxide layer (300); and a source region (500) and a drain region (600) formed at both sides of the channel region (400), respectively. A relationship between a lattice constant a of the rare earth oxide layer (300) and a lattice constant b of a semiconductor material of the channel region (400) and/or the source region (500) and the drain region (600) is a = (n ± c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0
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