SILICON NITRIDE SINTERED COMPACT, AND CIRCUIT BOARD AND ELECTRONIC DEVICE USING THE SAME

文件类型：PDF文档
文件大小：188K
PROBLEM TO BE SOLVED : To provide a silicon nitride sintered compact which has high dielectric strength and a superior heat-dissipating property and mechanical property, and a circuit board and an electronic device using the same. SOLUTION : A silicon nitride sintered compact includes silicon nitride as the major constituent, magnesium, a rare earth element and aluminum in an amount not less than 2 mass% and not more than 6 mass%, not less than 4 mass% and not more than 10 mass%, and not less than 0.1 mass% and not more than 0.5 mass% respectively, includes β-Si3N4 as a main crystal phase and a grain boundary phase containing a component expressed by the compositional formula : RE4Si2N2O7 (RE is a rare earth element). The ratio of the first peak intensity I1 of RE4Si2N2O7 at a diffraction angle of 30°-35° to the first peak intensity I0 of β-Si3N4 at a diffraction angle of 27°-28° (I1/I0) as determined by X-ray diffractometry is not greater than 20% (excluding 0%). COPYRIGHT : (C)2014, JPO&INPIT