For extreme ultraviolet reflective photo-mask

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PROBLEM TO BE SOLVED : To provide a reflective photomask that eliminates the need to use an expensive rare material by using a Ti oxide, a Zr alloy, a Zr oxide, or a Zr nitride as a material for a surface coating film while reducing effects caused by changes in material properties by oxidization, and a semiconductor device manufacturing method. SOLUTION : The reflective photomask has a substrate, a multilayer reflection film formed on the substrate, a protective film formed on the multilayer reflection film, a buffering film formed on the protective film, an absorbing film formed on the buffering film while having a multilayer structure, and a coating film that covers the whole face, on which an exposure transfer pattern obtained by patterning the buffering film and the absorbing film exists, and at least the side faces of the protective film and the multilayer reflection film. COPYRIGHT : (C)2009, JPO&INPIT