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[Object] To provide a bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.60 dB and which can be produced in a high yield, as well as an optical isolator. [Solving means] Provided is a bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of La3-x-yGdxBiyFe5O12 (provided that 0
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