SPUTTERING TARGET FOR OXIDE THIN FILM AND PROCESS FOR PRODUCING THE SAME

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PROBLEM TO BE SOLVED : To provide a sputtering target that can suppress the occurrence of anomalous discharge in the deposition of an oxide semiconductor film by sputtering method and can continuously and stably deposit a film, and to also provide an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target).SOLUTION : An oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide is provided. The composition amounts, by atomic ratio, of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula : In/(In+Ga+Zn)<0.75.