SELF-REFERENCE MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL COMPRISING FERRIMAGNETIC LAYERS

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MRAM cell comprising a magnetic tunnel junction comprising a storage layer having a net storage magnetization being adjustable when the magnetic tunnel junction is at a high temperature threshold and being pinned at a low temperature threshold; a sense layer having a reversible sense magnetization; and a tunnel barrier layer between the sense and storage layers; at least one of the storage and sense layer comprising a ferrimagnetic 3d-4f amorphous alloy material comprising a sub-lattice of 3d transition metals atoms providing a first magnetization and a sub-lattice of 4f rare-earth atoms providing a second magnetization, such that at a compensation temperature of said at least one of the storage layer and the sense layer, the first magnetization and the second magnetization are substantially equal. The disclosed MRAM cell can be written and read using a small writing and reading field, respectively.