Semiconductor device

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PROBLEM TO BE SOLVED : To impart stable electrical characteristics to a semiconductor device using an oxide semiconductor, and to improve the reliability of the semiconductor device. SOLUTION : There are provided a transistor including an oxide semiconductor layer in which buffer layers composed of the same component as the oxide semiconductor layer are provided on an upper surface part and a lower surface part of the oxide semiconductor layer, and a semiconductor device including the transistor. As the buffer layers to be brought in contact with the oxide semiconductor layer, a film containing an oxide of one or more elements selected from aluminum, gallium, zirconium, hafnium, and a rare-earth element can be applicable. COPYRIGHT : (C)2013, JPO&INPIT